EGR 317 - Physics of Semiconductor Devices

3.00 credits.

An introduction to semiconductor crystals and their properties; carrier modeling and action; fundamentals of carrier generation, transport, recombination and storage in semiconductors; principles of operation of p-n junction diodes, bipolar junction transistors, MOS field-effect transistors, MOS capacitors and some semiconductor photonic/optoelectronic devices. Device modeling is performed at a level that addresses basic physical principles and, at the same time, provides notions useful for integrated circuit analysis and design. *Prerequisite(s): PHY 202. Fall semester, even-numbered years.